More-than-Moore 2.5D and 3D SiP Integration by Riko Radojcic

Author:Riko Radojcic
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

That is, in order to leverage the full potential value proposition of 3D Stacking Technology, the system must be architected for it, i.e., in most cases taking an existing architecture and implementing it in 3D technology would result in a negative value proposition versus mono-die 2D SoC. Furthermore, 3D Technology imposes a number of incremental constraints that must be traded-off and optimized for a given application.

3.4.2 Application Knobs

One of the key differentiators of 3D Technology—versus 2.5D and especially versus 2D—is that it necessarily places two or more die in very close and intimate proximity to each other. The die are, after all, by definition, on top of each other with only a few 10 um’s of an insulator separating them. A necessary consequence is that this allows interactions among the die; interactions which can normally be ignored as negligible with the standard 2D SoC, or even 2.5D SiP, implementations. Furthermore, these interactions can be in electrical, thermal and mechanical domains, forcing a requirement for a multi-physics approach to assessing the various trade-offs; something which is oftentimes neglected with the traditional implementation schemes. The physics of the interactions, and the modeling methodologies required to describe them, are described in Chap. 4. This section outlines the basics of possible interactions in 3D SiPs , and focuses on the options for managing them.i. Electrical Domain Interactions: 3D die stacking introduces new features and new interactions, as following:

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